I am having some made will be 30 to 60 days around $300 small units up to 170A 250 pulse
this is what I have so far, for a QCW power LASER controller system. Essentially, there are two printed circuit boards (2.5" x 3.8") that could easily be placed side-by-side inside a portable unit. The controller board governs overall operation. The display board contains two dual seven segment displays which will sequentially display LASER power, voltage and current. Three LEDs on the controller board, viewed through the side of the enclosure, indicate whether the current display data is VOLTS, AMPS, or WATTS. Silk-screening on the enclosure can indicate "VOLTS, AMPS, or WATTS" under each LED.
Here are some of the design specifications I've come up with for this circuit:
The 747-IXFN520N075T2 n-channel MOSFET selected for this design can handle 200 amps maximum. This device needs to be mounted on the chassis of the LASER enclosure, and would benefit greatly from convection cooling (small fan).
Mouser detail page link for product:
http://www.mouser.com/ProductDetail...akFBZL2OHPWmOhQZc5h6JHmRW/S9k09qvREgHE7n4cA==
With this design concept, the frequency is fixed, but power can be adjusted by changing the pulse height of the output of the buffer amplifier U2. The voltage present at this point controls the conductivity of the channel of the power MOSFET. This type of power control is sometimes called pulse height modulation.
The rise time of the gate control signal of the MOSFET is a function of the gate charging capacitance of the MOSFET and the gate charging resistance, which is resistor R9 in the Power_Control_Stage drawing. Theoretically, the faster the rise time, the more efficient the circuit. However, going from 0 amps to 170 amps too quickly could generate a huge amount of EMI and RFI that could disrupt the control circuitry and possibly create some rapport issues with the FCC.
Per the datasheet for the IXFN520N075T2, rise time is about 26 nanoseconds with a gate charging resistance of 1ohm. In the LASER control circuitry, the external gate charging resistor, R9 is 6.2Kohm. With this value, I'd estimate the rise time of the gate signal to be about 40 to 50 microseconds. This rise time could be decreased by reducing the value of R9. However, I'd advise not to reduce the slope of the signal to a point where circuit stability is at risk.