madmacmo
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Posted: January 30, 2012 - NanoWerk.com
Graphene Sets
New Record as the Most Efficient Filler for Thermal Interface Materials
Edit:
Quote:
Originally Posted by lasersbee
Very interesting.... but...
I don't see any reference to Arctic Silver Epoxies's
properties. Since you cited Arctic Silver in your
Thread title.....
Jerry
Jerry,
Duly Noted and I admit the title is misleading, where any reference to Arctic Silver should have read somthing like "Next Generation Graphene Based Thermal Compound - Arctic Silver May Have to Move Over Sometime Within the Next 5 to 10 Years - Maybe"
Quote:
As reported in the January 3, 2012, online edition of Nano Letters
("Graphene-Multilayer Graphene Nanocomposites as Highly Efficient Thermal Interface Materials"), Balandin's Nano-Device Laboratory research group achieved a record enhancement of the thermal conductivity of TIMs by addition of an optimized mixture of graphene and multilayer graphene.
Quote:
The thermal conductivity of the epoxy matrix material was increased by an impressive factor of 23 at the 10 volume % of graphene loading (see Figure 2). The epoxy-graphene composite preserved all the properties required for industrial TIM applications.
Quote:
The new graphene-based fillers are different from previously tried carbon nanotubes or graphitic nanoplatelets, which are thicker graphitic particles with nanoscale dimensions. Earlier attempts of utilizing highly thermally conductive nanomaterials such as carbon nanotubes as fillers in TIMs have not led to practical applications due to weak thermal coupling of the carbon nanotubes to the matrix (i.e. base) materials and prohibitive cost. The Balandin group breakthrough became possible owing to better coupling of graphene to the base epoxy material
Posted: May 10, 2012 - NanoWerk.com
Graphene Quilts Take the Heat Away
Quote:
Gallium Nitride (GaN) is a semiconductor material commonly used in bright light-emitting diodes since the 1990s, which are now found in traffic lights and solid-state lighting. Thanks to its wide band gap, this very hard semiconductor material also finds applications in optoelectronic, high-power and high-frequency devices. For example, GaN can be used to make laser diodes emitting violet color, without use of nonlinear optical frequency-doubling (for instance, GaN-based violet laser diodes are used to read Blu-ray discs).
However, a severe problem that afflicts high-power GaN electronic and optoelectronic devices is self-heating and the difficulties of heat removal. GaN materials and devices operate at high voltages and can handle high power densities. The unavoidable side product of high power operation is a significant amount of dissipated heat, which leads to an increase of the inside junction temperature, performance degradation and eventual device breakdown.
As they just reported in the May 8, 2012 online edition of Nature Communications ("Graphene quilts for thermal management of high-power GaN transistors"; open access), Balandin together with three of his electrical engineering graduate students (Guanxiong Liu, Zhong Yan and Javed Khan) from his Nano-Device Laboratory (NDL) research group found an unusual solution for the thermal management problem of gallium-nitride technology: They demonstrated that thermal management of GaN transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with graphene multilayers.
Quote:
Figure 1: (clockwise from top left): optical microscopy image of the high-power gallium nitride (GaN) heterostructure field-effect transistor (HFET); schematic of the graphene-graphite quilt on top of the transistor structure for spreading the heat from the local hot spot near the transistor drain; colored scanning electron microscopy (SEM) image of the graphene quilt overlapping transistor; optical microscopy image of the graphene quilt on the device electrode illustrating its flexibility.)
Attached Thumbnails
Graphene Sets
New Record as the Most Efficient Filler for Thermal Interface Materials
Edit:
Quote:
Originally Posted by lasersbee
Very interesting.... but...
I don't see any reference to Arctic Silver Epoxies's
properties. Since you cited Arctic Silver in your
Thread title.....
Jerry
Jerry,
Duly Noted and I admit the title is misleading, where any reference to Arctic Silver should have read somthing like "Next Generation Graphene Based Thermal Compound - Arctic Silver May Have to Move Over Sometime Within the Next 5 to 10 Years - Maybe"
Quote:
As reported in the January 3, 2012, online edition of Nano Letters
("Graphene-Multilayer Graphene Nanocomposites as Highly Efficient Thermal Interface Materials"), Balandin's Nano-Device Laboratory research group achieved a record enhancement of the thermal conductivity of TIMs by addition of an optimized mixture of graphene and multilayer graphene.
Quote:
The thermal conductivity of the epoxy matrix material was increased by an impressive factor of 23 at the 10 volume % of graphene loading (see Figure 2). The epoxy-graphene composite preserved all the properties required for industrial TIM applications.
Quote:
The new graphene-based fillers are different from previously tried carbon nanotubes or graphitic nanoplatelets, which are thicker graphitic particles with nanoscale dimensions. Earlier attempts of utilizing highly thermally conductive nanomaterials such as carbon nanotubes as fillers in TIMs have not led to practical applications due to weak thermal coupling of the carbon nanotubes to the matrix (i.e. base) materials and prohibitive cost. The Balandin group breakthrough became possible owing to better coupling of graphene to the base epoxy material
Posted: May 10, 2012 - NanoWerk.com
Graphene Quilts Take the Heat Away
Quote:
Gallium Nitride (GaN) is a semiconductor material commonly used in bright light-emitting diodes since the 1990s, which are now found in traffic lights and solid-state lighting. Thanks to its wide band gap, this very hard semiconductor material also finds applications in optoelectronic, high-power and high-frequency devices. For example, GaN can be used to make laser diodes emitting violet color, without use of nonlinear optical frequency-doubling (for instance, GaN-based violet laser diodes are used to read Blu-ray discs).
However, a severe problem that afflicts high-power GaN electronic and optoelectronic devices is self-heating and the difficulties of heat removal. GaN materials and devices operate at high voltages and can handle high power densities. The unavoidable side product of high power operation is a significant amount of dissipated heat, which leads to an increase of the inside junction temperature, performance degradation and eventual device breakdown.
As they just reported in the May 8, 2012 online edition of Nature Communications ("Graphene quilts for thermal management of high-power GaN transistors"; open access), Balandin together with three of his electrical engineering graduate students (Guanxiong Liu, Zhong Yan and Javed Khan) from his Nano-Device Laboratory (NDL) research group found an unusual solution for the thermal management problem of gallium-nitride technology: They demonstrated that thermal management of GaN transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with graphene multilayers.
Quote:
Figure 1: (clockwise from top left): optical microscopy image of the high-power gallium nitride (GaN) heterostructure field-effect transistor (HFET); schematic of the graphene-graphite quilt on top of the transistor structure for spreading the heat from the local hot spot near the transistor drain; colored scanning electron microscopy (SEM) image of the graphene quilt overlapping transistor; optical microscopy image of the graphene quilt on the device electrode illustrating its flexibility.)
Attached Thumbnails
Attachments
Last edited: